View TC1016-29VCTTR_8662733.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

? 2005 microchip technology inc. ds21666b-page 1 features ? space-saving 5-pin sc-70 and sot-23 packages ? extremely low operating current for longer battery life: 53 a (typ.) ? very low dropout voltage ? rated 80 ma output current ? requires only 1 f ceramic output capacitance ? high output voltage accuracy: 0.5% (typ.) ? 10 sec (typ.) wake-up time from shdn ? power-saving shutdown mode: 0.05 a(typ.) ? overcurrent and overtemperature protection ? pin compatible upgrade for bipolar regulators applications ? cellular/gsm/phs phones ? battery-operated systems ? portable computers ? medical instruments ? electronic games ? pagers general description the tc1016 is a high-accuracy (typically 0.5%), cmos upgrade for bipolar low dropout regulators (ldos). the tc1016 is offered in both the sc-70 and sot-23 packages. the sc-70 package represents a 50% footprint reduction versus the popular sot-23 package. developed specifically for battery-powered systems, the devices cmos construction consumes only 53 a typical supply current over the entire 80 ma operating load range. this can be as much as 60 times less than the quiescent operating current consumed by bipolar ldos. with small-space requirements and cost in mind, the tc1016 was developed to be stable over the entire input voltage and output current operating range using low value (1 f ceramic), low equivalent series resistance (esr) output capacitors. additional integrated features (such as shutdown, overcurrent and overtemperature protection) further reduce board space and cost of the entire voltage-regulating application. key performance parameters for the tc1016 are low drop out voltage (150 mv (typ.) at 80 ma output current), low supply current while shutdown (0.05 a typical) and fast stable response to sudden input voltage and load changes. pin configurations sc-70 13 4 5 2 shdn nc v out v in gnd tc1016 sot-23 1 23 54 nc v out shdn gnd v in tc1016 tc1016 80 ma, tiny cmos ldo with shutdown downloaded from: http:///
tc1016 ds21666b-page 2 ? 2005 microchip technology inc. 1.0 electrical characteristics absolute maximum ratings* input voltage .........................................................6.5v power dissipation................ internally limited (note 7) operating temperature ................. -40c < t j < 125c storage temperature......................... -65c to +150c maximum voltage on any pin........v in + 0.3v to -0.3v *notice: static-sensitive device. unused devices must be stored in conductive material. pr otect devices from static dis- charge and static fields. st resses above those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ra tings only and functional oper- ation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability electrical characteristics v in = v r + 1v, i l = 100 a, c l = 1.0f, shdn > v ih , t a = 25c, unless otherwise noted. boldface type specifications apply for junction temperatures of C 40c to +125c. parameter sym min typ max units test conditions input operating voltage v in 2.7 6.0 v note 1 maximum output current i outmax 80 m a output voltage v out v r C 2.5% v r 0.5% v r + 2.5% v note 2 v out temperature coefficient tcv out 40 ppm/c note 3 line regulation ( v out / v in )/v r 0 . 0 1 0.2 %/v (v r + 1v) < v in < 6v load regulation ( note 4 ) v out /v r 0 . 2 3 1 %i l = 0.1 ma to i outmax dropout voltage ( note 5 )v in C v out 2 100150 200300 mv i l = 100 a i l = 50 ma i l = 80 ma supply current i in 5 3 90 a shdn = v ih , i l = 0 shutdown supply current i insd 0.05 0.5 a shdn = 0v power supply rejection ratio psrr 58 db f =1 khz, i l = 50 ma wake-up time (from shutdown mode) t wk 1 0 s v in = 5v, i l = 60 ma, c in = 1 f, c out = 1 f, f = 100 hz settling time (from shutdown mode) t s 3 2 s v in = 5v, i l = 60 ma,c in = 1f, c out = 1 f, f = 100 hz output short circuit current i outsc 120 ma v out = 0v thermal regulation v out /p d 0 . 0 4v / w notes 6, 7 thermal shutdown die temperature t sd 160 c thermal shutdown hysteresis t sd 1 0 c output noise en 800 nv/ hz f = 10 khz shdn input high threshold v ih 60 % v in v in = 2.7v to 6.0v shdn input low threshold v il 15 %v in v in = 2.7v to 6.0v note 1: the minimum v in has to meet two conditions: v in 2.7v and v in (v r + 2.5%)+v dropout . 2: v r is the regulator voltage setting. for example: v r = 1.8v, 2.7v, 2.8v, 3.0v. 3:4: regulation is measured at a constant junc tion temperature using low duty cycle pulse te sting. load regulation is tested over a load range from 0.1 ma to the maximum specified output current. changes in output voltage due to heating effects are covered by the thermal regulation specification. 5: dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% bel ow its nominal value at a 1v differential. 6: thermal regulation is defined as the change in output voltage at a time t after a change in power d issipation is applied, exclu ding load or line regulation effects. specifications are for a current pulse equal to ilmax at v in = 6v for t = 10 msec. 7: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable j uction temperature and the thermal resistance from junction-to-air (i.e. t a , t j , ja ). exceeding the maximum allowable power dissipation causes the device to initia te thermal shutdown. please see section 5.0 thermal considerations of this data sheet for more details. tcv out v outmax v outmin C () 10 6 v out t ------------------------------------------------------------------------------------- - = downloaded from: http:///
? 2005 microchip technology inc. ds21666b-page 3 tc1016 2.0 typical performance curves figure 2-1: dropout voltage vs. output current. figure 2-2: load regulation vs. temperature. figure 2-3: supply current vs. input voltage. figure 2-4: dropout voltage vs. temperature. figure 2-5: short circuit current vs. input voltage. figure 2-6: supply current vs. temperature. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 0 0.05 0.1 0.15 0.2 0.25 0 1020304050607080 load current (ma) dropout voltage (v) v out = 2.7v +125c +25c -40c 0.05 0.10 0.15 0.20 0.25 0.30 0.35 -45 -20 5 30 55 80 105 130 temperature (c) load regulation (%) v out = 2.7v full load = 0 C 80 ma v in = 3.3v v in = 3.7v v in = 6.0v 47.0 48.0 49.0 50.0 51.0 52.0 53.0 54.0 55.0 56.0 57.0 3.33.63.94.24.54.85.15.45.76.0 input voltage (v) supply current (a) v out = 2.7v +125c +25c -40c 0.05 0.10 0.15 0.20 0.25 -45 -20 5 30 55 80 105 130 temperature(c) dropout voltage (v) v out = 2.7v i load = 80 ma i load = 50ma 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 123456 input voltage short circuit current (a) v out = 2.7v 47.0 48.0 49.0 50.0 51.0 52.0 53.0 54.0 55.0 56.0 57.0 -45 -20 5 30 55 80 105 130 temperature(c) supply current (a) v out = 2.7v v in = 6v v in = 3.3v downloaded from: http:///
tc1016 ds21666b-page 4 ? 2005 microchip technology inc. figure 2-7: dropout voltage vs. output current. figure 2-8: load regulation vs. temperature. figure 2-9: supply current vs. temperature. figure 2-10: dropout voltage vs. temperature. figure 2-11: supply current vs. input voltage figure 2-12: output voltage vs. supply voltage. 0 0.05 0.1 0.15 0.2 0.25 0 1020304050607080 load current (ma) dropout voltage (v) v out = 3.0v +125c +25c -40c 0.00 0.05 0.10 0.15 0.20 0.25 0.30 -45 -20 5 30 55 80 105 130 temperature (c) load regulation (%) v in = 6.0v v in = 4.0v v in = 3.3v v out = 3.0v full load = 0 C 80 ma 47.0 48.0 49.0 50.0 51.0 52.0 53.0 54.0 - 4 5- 2 0 5 3 05 58 01 0 51 3 0 temperature (c) supply current (a) v out = 3.0v v in = 6.0v v in = 3.3v 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 -45 -20 5 30 55 80 105 130 temperature (c) dropout voltage (v) v out = 3.0v i load = 80 ma i load = 50 ma 47.0 48.0 49.0 50.0 51.0 52.0 53.0 54.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0 input voltage (v) supply current (a) v out = 3.0v +125c +25c -40c 2.789 2.790 2.791 2.792 2.793 2.794 2.795 2.796 2.797 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6 input voltage (v) output voltage (v) +25c +125c -40c v out = 2.8v downloaded from: http:///
? 2005 microchip technology inc. ds21666b-page 5 tc1016 figure 2-13: output voltage vs. output current. figure 2-14: shutdown current vs. input voltage. figure 2-15: power supply rejection ratio vs. frequency. figure 2-16: output voltage vs. temperature. figure 2-17: output noise vs. frequency. figure 2-18: power supply rejection ratio vs. frequency. 2.787 2.788 2.789 2.790 2.791 2.792 2.793 2.794 2.795 2.796 2.797 0 1020304050607080 output current (ma) output voltage (v) v in = 3.3v v in = 6.0v v out = 2.8v 0.000 0.050 0.100 0.150 0.200 0.250 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0 input voltage (v) shutdown current (a) +125c +25c -80 -70 -60 -50 -40 -30 -20 -10 0 1. e +01 1. e+03 1. e+0 5 frequency (hz) psrr(db) 10 100 1k 10k 100k 1m v indc = 2.8v v inac = 100 mvp-p v outdc = 1.8v i out = 100 a c out = 1 f x7r ceramic 2.789 2.790 2.791 2.792 2.793 2.794 2.795 2.796 2.797 2.798 -45 -20 5 30 55 80 105 130 temperature (c) output voltage (v) v in = 6.0v v in = 3.3v v in = 4.0v v out = 2.8v 0.01 0.1 1 10 100 10 100 1000 10000 100000 1000000 frequency (hz) noise (v/ hz) v in = 4.0v v out = 3.0v c in = 1 f c out = 1 f i out = 40 ma -80 -70 -60 -50 -40 -30 -20 -10 0 10 1 000 1 00000 frequency (hz) psrr(db) 10 100 1k 10k 100k 1m v indc = 2.8v v inac = 100 mvp-p v outdc = 1.8v i out = 1 ma c out = 1 f x7r ceramic downloaded from: http:///
tc1016 ds21666b-page 6 ? 2005 microchip technology inc. figure 2-19: power supply rejection ratio vs. frequency. figure 2-20: wake-up response. figure 2-21: wake-up response. figure 2-22: load transient response. figure 2-23: load transient response. figure 2-24: line transient response. -80 -70 -60 -50 -40 -30 -20 -10 0 10 1 000 1 00000 frequency (hz) psrr(db) 10 100 1k 10k 100k 1m v indc = 2.8v v inac = 100 mvp-p v outdc = 1.8v i out = 50 ma c out = 1 f x7r ceramic v in = 2.8v c in = 10 f c out = 1 f ceramic v out = 1.8v shutdown input v in = 2.8v c in = 10 f c out = 4.7 f ceramic v out = 1.8v shutdown input v in = 2.8v c in = 10 f c out = 1 f ceramic v out = 1.8v i out = 0.1 ma to 60 ma v in = 2.8v c in = 10 f c out = 1 f ceramic v out = 1.8v i out = 0.1 ma to 60 ma i load = 60 ma c in = 0 f c out = 1 f ceramic v out = 1.8v i out = 2.8v to 3.8v downloaded from: http:///
? 2005 microchip technology inc. ds21666b-page 7 tc1016 figure 2-25: line transient response. figure 2-26: line transient response. figure 2-27: line transient response. i load = 60 ma c in = 0 f c out = 4.7 f ceramic v out = 1.8v v out = 2.8v to 3.8v i load = 100 a c in = 0 f c out = 1 f ceramic v in = 4v to 5v v out = 2.8v i load = 100 a c in = 0 f c out = 10 f ceramic v in = 4v to 5v v out = 2.8v downloaded from: http:///
tc1016 ds21666b-page 8 ? 2005 microchip technology inc. 3.0 pin descriptions the descriptions of the pins are listed in table 3-1. table 3-1: pin function table 3.1 shutdown control input (shdn ) the regulator is fully enabled when a logic-high is applied to shdn . the regulator enters shutdown when a logic-low is applied to this input. during shutdown, the output voltage falls to zero and the supply current is reduced to 0.05 a (typ.) 3.2 ground terminal (gnd) for best performance, it is recommended that the ground pin be tied to a ground plane. 3.3 regulated voltage output (v out ) bypass the regulated voltage output to gnd with a minimum capacitance of 1 f. a ceramic bypass capacitor is recommended for best performance. 3.4 unregulated supply input (v in ) the minimum v in has to meet two conditions in order to ensure that the output maintains regulation: v in 2.7v and v in [(v r + 2.5%) + v dropout ]. the maximum v in should be less than or equal to 6v. power dissipation may limit v in to a lower potential in order to maintain a junction temperature below 125c. refer to section 5.0 thermal considerations , for determining junction temperature. it is recommended that v in be bypassed to gnd with a ceramic capacitor. 5-pin sc-70 pin no. 5-pin sot-23 name function 13 shdn shutdown control input 2 4 nc no connect 3 2 gnd ground terminal 45v out regulated voltage output 51v in unregulated supply input downloaded from: http:///
? 2005 microchip technology inc. ds21666b-page 9 tc1016 4.0 detailed description the tc1016 is a precision, fixed-output, linear voltage regulator. the internal linear pass element is a p- channel mosfet. as with all p-channel cmos ldos, there is a body drain diode, with the cathode connected to v in and the anode connected to v out (figure 4-1). as shown in figure 4-1, the output voltage of the ldo is sensed and divided down internally to reduce external component count. the internal error amplifier has a fixed, band gap reference on the inverting input, with the sensed output voltage on the non-inverting input. the error amplifier output will pull the gate voltage down until the inputs of the error amplifier are equal in order to regulate the output voltage. by sensing the current in the p-channel mosfet, the maximum current delivered to the load is limited to a typical value of 120 ma, preventing excessive current from damaging the printed circuit board (pcb) in the event of a shorted or faulted load. an internal thermal sensing device is used to monitor the junction temperature of the ldo. when the sensed temperature is over the set threshold of 160c (typ.), the p-channel mosfet is turned off. when the mosfet is off, the power dissipation internal to the device is almost zero. the device cools until the junction temperature is approximately 150c and the mosfet is turned on. if the internal power dissipation is still high enough for the junction to rise to 160c, it will again shut off and cool. the maximum operating junction temperature of the device is 125c. steady- state operation at or near the 160c overtemperature point can lead to permanent damage of the device. the output voltage (v out ) remains stable over the entire input operating voltage range (2.7v to 6.0v), as well as the entire load range (0 ma to 80 ma). the output voltage is sensed through an internal resistor divider and compared with a precision internal voltage reference. several fixed-output voltages are available by changing the value of the internal resistor divider. figure 4-2 shows a typical application circuit. the reg- ulator is enabled anytime the shutdown input pin is at or above v ih , and shutdown (disabled) anytime the shutdown input pin is below v il . for applications where the shdn feature is not used, tie the shdn pin directly to the input supply voltage source. while in shutdown, the supply current decreases to 0.05 a (typ.) and the p-channel mosfet is turned off. as shown in figure 4-2, batteries have internal source impedance. an input capacitor in used to lower the input impedance of the ldo. in some applications, high input impedance can cause the ldo to become unstable. adding more input capacitance can compensate for this. figure 4-1: tc1016 block diagram. figure 4-2: typical application circuit. + - ea v out v ref shdn v in 54 r 1 r 2 12 3 shdn gnd v in nc current limit over error amp feedback resistors control te m p . body diode v out 54 12 3 shdn gnd v in nc battery r source c in 1f ceramic c out 1f ceramic tc1016 load downloaded from: http:///
tc1016 ds21666b-page 10 ? 2005 microchip technology inc. 4.1 input capacitor low input source impedance is necessary for the ldo to operate properly. when operating from batteries, or in applications with long lead length (> 10") between the input source and the ldo, some input capacitance is required. a minimum of 0.1 f is recommended for most applications and the capacitor should be placed as close to the input of the ldo as is practical. larger input capacitors will help reduce the input impedance and further reduce any high-frequency noise on the input and output of the ldo. 4.2 output capacitor a minimum output capacitance of 1 f for the tc1016 is required for stability. the esr requirements on the output capacitor are between 0 and 2 ohms. the output capacitor should be located as close to the ldo output as is practical. ceramic materials x7r and x5r have low temperature coefficients and are well within the acceptable esr range required. a typical 1 f x5r 0805 capacitor has an esr of 50 milli-ohms. larger output capacitors can be used with the tc1016 to improve dynamic behavior and input ripple rejection performance. ceramic, aluminum electrolytic or tantalum capacitor types can be used. since many aluminum electrolytic capacitors freeze at approximately C30 c, ceramic or solid tantalums are recommended for applications operating below C25 c. when operating from sources other than batteries, supply noise rejection and tran- sient response can be improved by increasing the value of the input and output capacitors, and by employing passive filtering techniques. 4.3 turn-on response the turn on response is defined as two separate response categories, wake-up time (t wk ) and settling time (t s ). the tc1016 has a fast t wk (10 sec, typ.) when released from shutdown. figure 4-3 provides the tc1016s t wk . the t wk is defined as the time it takes for the output to rise to 2% of the v out value after being released from shutdown. the total turn-on response is defined as the t s (see figure 4-3). the t s (inclusive with t wk ) is defined as the condition when the output is within 98% of its fully enabled value (42 sec, typ.) when released from shut- down. the settling time of the output voltage is dependent on load conditions and output capacitance on v out (rc response). table 4-1 demonstrates the typical turn-on response timing for different input voltage power-up frequencies: v out = 2.8v, v in = 5.0v, i out = 60 ma and c out = 1 f. table 4-1: typical turn-on response timing figure 4-3: wake-up time from shutdown. frequency typical (t wk ) typical (t s ) 1000 hz 5.3 sec 14 sec 500 hz 5.9 sec 16 sec 100 hz 9.8 sec 32 sec 50 hz 14.5 sec 52 sec 10 hz 17.2 sec 77 sec v ih t s t wk v out 98% 2% v il shdn downloaded from: http:///
? 2005 microchip technology inc. ds21666b-page 11 tc1016 5.0 thermal considerations 5.1 thermal shutdown integrated thermal-protection circuitry shuts the regulator off when die temperature exceeds approximately 160c. the regulator remains off until the die temperature drops to approximately 150c. 5.2 power dissipation the tc1016 is available in the sc-70 package. the thermal resistance for the sc-70 package is approxi- mately 450c/w when the copper area used in the pcb layout is similar to the jedec j51-7 high thermal conductivity or semi g42-88 standards. for applica- tions with larger or thicker copper areas, the thermal resistance can be lowered. see an792 a method to determine how much power a sot23 can dissipate in an application (ds00792), for a method to determine the thermal resistance for a particular application. the tc1016 power dissipation capability is dependant upon several variables: input voltage, output voltage, load current, ambient temperature and maximum junction temperature. the absolute maximum steady- state junction temperature is rated at 125c. the power dissipation within the device is equal to: equation 5-1: the v in x i gnd term is typically very small when com- pared to the (v in -v out ) x i load term simplifying the power dissipation within the ldo to be: equation 5-2: to determine the maximum power dissipation capability, the following equation is used: equation 5-3: given the following example: find: 1. internal power dissipation: 2. junction temperature: 3. maximum allowable dissipation: in this example, the tc1016 dissipates approximately 82.2 mw and the junction temperature is raised 37c over the 55c ambient to 92c. the absolute maximum power dissipation is 155 mw when given a maximum ambient temperature of 55c. input voltage, output voltage or load current limits can also be determined by substituting known values in equation 5-2 and equation 5-3. 5.3 layout considerations the primary path for heat conduction out of the sc-70 package is through the package leads. using heavy, wide traces at the pads of the device will facilitate the removal of heat within the package, thus lowering the thermal resistance r ja . by lowering the thermal resistance, the maximum internal power dissipation capability of the package is increased. figure 5-1: suggested layout p d v in v out C () i load v in i gnd + = p d v in v out C () i load = p dmax t j_max t a_max C () r ja ------------------------------------------------- = where: t j_max = maximum junction temperature allowed t a_max = the maximum ambient temperature allowed r ja = the thermal resistance from junction-to-air v in = 3.0v to 4.1v v out = 2.8v 2.5% i load = 60 ma (output current) t amax = 55c (max. ambient temp.) p dmax v in_max v out_min C () i load = 4.1 v 2.8 0.975 () C () 60 ma = 82.2 mw = t j_max p dmax r ja = 82.2 mwatts 450 c /w t amax + = 92 c = 37 c 55 c + = p d t j_max t a_max C r ja -------------------------------------------- = 155 mw = 125 c 55 c C 450 c /w ---------------------------------- - = shdn u1 v in v out gnd c 1 c 2 downloaded from: http:///
tc1016 ds21666b-page 12 ? 2005 microchip technology inc. 6.0 package information 6.1 package marking information 5-lead sc-70 example: xxn (front) yww (back) ae7 (front) 432 (back) 5-lead sc-70 example: xxnn ae74 part number code tc1016 C 1.8vlt ae tc1016 C 1.85vlt aw tc1016 C 2.6vlt af tc1016 C 2.7vlt ag tc1016 C 2.8vlt ah tc1016 C 2.85vlt aj tc1016 C 2.9vlt ak tc1016 C 3.0vlt al tc1016 C 3.3vlt am tc1016 C 4.0vlt ap legend: xx...x customer-specific information* y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week 01) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e downloaded from: http:///
? 2005 microchip technology inc. ds21666b-page 13 tc1016 6.1 package marking information (continued) 5-lead sot-23 part number code tc1016 C 1.8vct hk tc1016 C 1.85vct hw tc1016 C 2.6vct hl tc1016 C 2.7vct hm tc1016 C 2.8vct hp tc1016 C 2.85vct hq tc1016 C 2.9vct hr tc1016 C 3.0vct hs tc1016 C 3.3vct ht tc1016 C 4.0vct hu example xxnn hk73 downloaded from: http:///
tc1016 ds21666b-page 14 ? 2005 microchip technology inc. 5-lead plastic small outline transistor (lt) (sc-70) dimensions: inches (mm ) 0 . 30 0 . 15 . 012 . 006 b l ead wi dth 0 . 18 0 . 10 . 007 . 00 4 c l ead t h i c k ne ss 0 . 30 0 . 10 . 012 . 00 4 l f oot l en g th 2 . 20 1 . 80 . 087 . 071 d o v era ll l en g th 1 . 35 1 . 15 . 053 . 0 4 5 e 1 m o l ded p ac k a g e wi dth 2 .4 0 1 . 80 . 0 94 . 071 e o v era ll wi dth 0 . 10 0 . 00 . 00 4 . 000 a1 stando ff 1 . 00 0 . 80 . 03 9 . 031 a2 m o l ded p ac k a g e t h i c k ne ss 1 . 10 0 . 80 . 0 4 3 . 031 a o v era ll h e ig ht 0 . 65 (b sc ) . 026 (b sc ) p pi tch 5 5 n n um b er o f pi n s m a x n o m min m a x n o m min d i men si on li m i t s millimeter s * in c he s un i t s e x ceed . 005 " ( 0 . 127mm ) per si de . d i men si on s d and e 1 do not i nc l ude mo l d fl a s h or protru si on s. m o l d fl a s h or protru si on s s ha ll not n ote s: jeit a (ei a j) standard : sc - 70 draw i n g n o . c0 4- 061 * contro lli n g p arameter l e 1 e c d 1 b p a2 a1 a q 1 t op o f m o l ded pkg to l ead shou l der q 1 . 00 4. 016 0 . 10 0 .4 0 n downloaded from: http:///
? 2005 microchip technology inc. ds21666b-page 15 tc1016 5-lead plastic small outline transistor (ot) (sot-23) 10 5 0 10 5 0 mold draft angle bottom 10 5 0 10 5 0 mold draft angle top 0.50 0.43 0.35 .020 .017 .014 b lead width 0.20 0.15 0.09 .008 .006 .004 c lead thickness 10 5 0 10 5 0 foot angle 0.55 0.45 0.35 .022 .018 .014 l foot length 3.10 2.95 2.80 .122 .116 .110 d overall length 1.75 1.63 1.50 .069 .064 .059 e1 molded package width 3.00 2.80 2.60 .118 .110 .102 e overall width 0.15 0.08 0.00 .006 .003 .000 a1 standoff 1.30 1.10 0.90 .051 .043 .035 a2 molded package thickness 1.45 1.18 0.90 .057 .046 .035 a overall height 1.90 .075 p1 outside lead pitch (basic) 0.95 .038 p pitch 5 5 n number of pins max nom min max nom min dimension limits millimeters inches* units 1 p d b n e e1 l c a2 a a1 p1 eceed .005" (0.127mm) per side. dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not notes: eiaj equivalent: sc-74a drawing no. c04-091 *controlling parameter downloaded from: http:///
tc1016 ds21666b-page 16 ? 2005 microchip technology inc. notes: downloaded from: http:///
? 2005 microchip technology inc. ds21666b-page 17 tc1016 appendix a: revision history revision b (march 2005) ? updated section 6.0 package information to include old and new packaging examples, as well as replaced sc-70 package diagram with up-to- date version. added additional voltage options ? added sot-23 package and voltage options. ? applied new template and rearranged sections to be consistent with current documentation. .revision a (october 2001) ? original release of this document. downloaded from: http:///
tc1016 ds21666b-page 18 ? 2005 microchip technology inc. notes: downloaded from: http:///
? 2005 microchip technology inc. ds21666a-page19 tc1016 product identification system to order or obtain information, e.g. , on pricing or delivery, refer to the factory or the listed sales office. device: tc1016: 80 ma tiny cmos ldo with shutdown voltage options*: (standard) 1.8v 1.85v 2.6v 2.7v 2.8v 2.85v 2.9v 3.0v 3.3v 4.0v * other voltage options available. please contact your local microchip sales office for details. temperature range: v = -40c to +125c packages: lttr = 5-pin sc-70 (tape and reel) cttr = 5-pin sot-23 (tape and reel) examples: a) tc1016 -1.8vcttr: 80 ma tiny cmos ldo with shutdown, sot-23 package. a) tc1016 -1.8vlttr: 80 ma tiny cmos ldo with shutdown, sc-70 package. b) tc1016 -1.85vcttr: 80 ma tiny cmos ldo with shutdown, sot-23 package. c) tc1016 -1.85vlttr: 80 ma tiny cmos ldo with shutdown, sc-70 package. d) tc1016 -2.6vcttr: 80 ma tiny cmos ldo with shutdown, sot-23 package. e) tc1016 -2.6vlttr: 80 ma tiny cmos ldo with shutdown, sc-70 package. f) tc1016 -2.7vcttr : 80 ma tiny cmos ldo with shutdown, sot-23 package. g) tc1016 -2.7vlttr : 80 ma tiny cmos ldo with shutdown, sc-70 package. h) tc1016 -2.8vcttr: 80 ma tiny cmos ldo with shutdown, sot-23 package. i) tc1016 -2.8vlttr: 80 ma tiny cmos ldo with shutdown, sc-70 package. j) tc1016 -2.85vlttr: 80 ma tiny cmos ldo with shutdown, sc-70 package. part no. x .xx x temperature voltage options device range xxxx package downloaded from: http:///
tc1016 ds21666a-page20 ? 2005 microchip technology inc. notes: downloaded from: http:///
? 2005 microchip technology inc. ds21666b-page 21 information contained in this publication regarding device applications and the like is prov ided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application m eets with your specifications. microchip makes no representations or war- ranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchips products as critical components in life support systems is not authorized except with express written approval by microchip. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, accuron, dspic, k ee l oq , micro id , mplab, pic, picmicro, picstart, pro mate, powersmart, rfpic, and smartshunt are registered trademarks of micr ochip technology incorporated in the u.s.a. and other countries. amplab, filterlab, migratable memory, mxdev, mxlab, picmaster, seeval, smartsensor and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. analog-for-the-digital age, app lication maestro, dspicdem, dspicdem.net, dspicworks, ecan, economonitor, fansense, flexrom, fuzzylab, in-circuit serial programming, icsp, icepic, mpasm, mplib, mplink, mpsim, pickit, picdem, picdem.net, piclab, pictail, powercal, powerinfo, powermate, powertool, rflab, rfpicdem, select mode, smart serial, smarttel, total endurance and wiperlock are tr ademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of mi crochip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2005, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip produc ts in a manner outside the operating specif ications contained in microchips data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as unbreakable. code protection is constantly evolving. we at microchip are co mmitted to continuously improvin g the code protection features of our products. attempts to break microchips code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona and mountain view, california in october 2003. the companys quality system processes and procedures are for its picmicro ? 8-bit mcus, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory an d analog products. in addition, microchips quality system for the design and manufacture of development systems is iso 9001:2000 certified. downloaded from: http:///
ds21666b-page 22 ? 2005 microchip technology inc. americas corporate office 2355 west chandler blvd. chandler, az 85224-6199 tel: 480-792-7200 fax: 480-792-7277 technical support: http://support.microchip.com web address: www.microchip.com atlanta alpharetta, ga tel: 770-640-0034 fax: 770-640-0307 boston westborough, ma tel: 774-760-0087 fax: 774-760-0088 chicago itasca, il tel: 630-285-0071 fax: 630-285-0075 dallas addison, tx tel: 972-818-7423 fax: 972-818-2924 detroit farmington hills, mi tel: 248-538-2250 fax: 248-538-2260 kokomo kokomo, in tel: 765-864-8360 fax: 765-864-8387 los angeles mission viejo, ca tel: 949-462-9523 fax: 949-462-9608 san jose mountain view, ca tel: 650-215-1444 fax: 650-961-0286 toronto mississauga, ontario, canada tel: 905-673-0699 fax: 905-673-6509 asia/pacific australia - sydney tel: 61-2-9868-6733 fax: 61-2-9868-6755 china - beijing tel: 86-10-8528-2100 fax: 86-10-8528-2104 china - chengdu tel: 86-28-8676-6200 fax: 86-28-8676-6599 china - fuzhou tel: 86-591-8750-3506 fax: 86-591-8750-3521 china - hong kong sar tel: 852-2401-1200 fax: 852-2401-3431 china - shanghai tel: 86-21-5407-5533 fax: 86-21-5407-5066 china - shenyang tel: 86-24-2334-2829 fax: 86-24-2334-2393 china - shenzhen tel: 86-755-8203-2660 fax: 86-755-8203-1760 china - shunde tel: 86-757-2839-5507 fax: 86-757-2839-5571 china - qingdao tel: 86-532-502-7355 fax: 86-532-502-7205 asia/pacific india - bangalore tel: 91-80-2229-0061 fax: 91-80-2229-0062 india - new delhi tel: 91-11-5160-8631 fax: 91-11-5160-8632 japan - kanagawa tel: 81-45-471- 6166 fax: 81-45-471-6122 korea - seoul tel: 82-2-554-7200 fax: 82-2-558-5932 or 82-2-558-5934 singapore tel: 65-6334-8870 fax: 65-6334-8850 taiwan - kaohsiung tel: 886-7-536-4818 fax: 886-7-536-4803 taiwan - taipei tel: 886-2-2500-6610 fax: 886-2-2508-0102 taiwan - hsinchu tel: 886-3-572-9526 fax: 886-3-572-6459 europe austria - weis tel: 43-7242-2244-399 fax: 43-7242-2244-393 denmark - ballerup tel: 45-4450-2828 fax: 45-4485-2829 france - massy tel: 33-1-69-53-63-20 fax: 33-1-69-30-90-79 germany - ismaning tel: 49-89-627-144-0 fax: 49-89-627-144-44 italy - milan tel: 39-0331-742611 fax: 39-0331-466781 netherlands - drunen tel: 31-416-690399 fax: 31-416-690340 england - berkshire tel: 44-118-921-5869 fax: 44-118-921-5820 w orldwide s ales and s ervice 03/01/05 downloaded from: http:///

▲Up To Search▲

Price & Availability of TC1016-29VCTTR

	To Download TC1016-29VCTTR Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .